TITLE:
Preparation of CuO-Ta2O5 Composites Using a Simple Co-Sputtering Method
AUTHORS:
Kenta Miura, Takumi Osawa, Yuya Yokota, Zobaer Hossain, Osamu Hanaizumi
KEYWORDS:
Ta2O5, CuO, Co-Sputtering, X-Ray Diffraction, Photoluminescence
JOURNAL NAME:
Journal of Materials Science and Chemical Engineering,
Vol.3 No.9,
September
22,
2015
ABSTRACT: We prepared CuO-Ta2O5 composite films using our simple co-sputtering method for the first time.
Four specimens were prepared from an as-deposited CuO-Ta2O5 sample by cutting it using a diamond-
wire saw, and the specimens were subsequently annealed at 600°C - 900°C. The X-ray diffraction
and photoluminescence (PL) of the annealed specimens were evaluated. The CuO-Ta2O5 film annealed at 600°C seemed to be primarily amorphous phase, and a sharp PL peak at a wavelength
of 450 nm, due to the existence of Cu2+, was observed from the film. In contrast, the CuO-Ta2O5 films annealed at 700°C, 800°C, and 900°C seemed to be tetragonal CuTa2O6 phases. We expect that
good-quality CuTa2O6 films can be obtained using our very simple co-sputtering method and subsequent
annealing above 900°C. Such CuTa2O6 films can be used in chemisorptions conductometric
gas sensors.