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ORCIDTillmann Krauss
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- affiliation: Technical University of Darmstadt, Germany
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2020 – today
- 2021
[j2]Maximilian Reuter
, Johannes Pfau, Tillmann A. Krauss, Jürgen Becker, Klaus Hofmann:
From MOSFETs to Ambipolar Transistors: Standard Cell Synthesis for the Planar RFET Technology. IEEE Trans. Circuits Syst. I Regul. Pap. 68(1): 114-125 (2021)- 2020
- [c10]Maximilian Reuter, Johannes Pfau, Tillmann A. Krauss, Mahdi Moradinasab, Udo Schwalke, Jürgen Becker, Klaus Hofmann:
Towards Ambipolar Planar Devices: The DeFET Device in Area Constrained XOR Applications. LASCAS 2020: 1-4
2010 – 2019
- 2019
- [c9]Maximilian Reuter, Tillmann A. Krauss, Mahdi Moradinasab, Johannes Pfau, Udo Schwalke, Jürgen Becker, Klaus Hofmann:
From MOSFETs to Ambipolar Transistors: A Static DeFET Inverter Cell for SOI. APCCAS 2019: 113-116 - 2018
- [c8]Tillmann Krauss, Frank Wessely, Udo Schwalke:
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS. DTIS 2018: 1-4 - [c7]Mike Schwarz, Laurie E. Calvet, John P. Snyder, Tillmann Krauss, Udo Schwalke, Alexander Kloes:
Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection. MIXDES 2018: 67-72 - 2017
- [c6]Tillmann Krauss, Frank Wessely, Udo Schwalke:
Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS. DTIS 2017: 1-6 - [c5]Mike Schwarz, John P. Snyder, Tillmann Krauss, Udo Schwalke, Laurie E. Calvet, Alexander Kloes:
Simulation framework for barrier lowering in Schottky barrier MOSFETs. MIXDES 2017: 149-153 - 2016
- [c4]Tillmann Krauss, Frank Wessely, Udo Schwalke:
Electrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS. SSD 2016: 681-686 - 2014
- [c3]Tillmann Krauss, Frank Wessely, Udo Schwalke:
An electrostatically doped planar device concept. DTIS 2014: 1-4 - 2013
- [j1]Frank Wessely, Tillmann Krauss, Udo Schwalke:
Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs. Microelectron. J. 44(12): 1072-1076 (2013) - [c2]Udo Schwalke, Frank Wessely, Tillmann Krauss:
Simulation and experimental verification: Dopant-free Si-nanowire CMOS technology on silicon-on-insulator material. IDT 2013: 1-6 - 2012
- [c1]Frank Wessely, Tillmann Krauss, Udo Schwalke:
Dopant-free CMOS: A new device concept. DTIS 2012: 1-3
Coauthor Index
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