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2010 – 2019
- 2018
[c6]F. El Mahboubi, Marise Bafleur, V. Boitier, Jean-Marie Dilhac:
Energy-harvesting powered variable storage topology for battery-free wireless sensors. MOCAST 2018: 1-4- [c5]A. Siskos, F. El Mahboubi, V. Boitier, Theodore Laopoulos, Marise Bafleur:
A power management system using reconfigurable storage scheme for batteryless wireless sensor nodes. MOCAST 2018: 1-4 - 2017
- [j32]Nathalie Labat, François Marc, Hélène Frémont, Marise Bafleur:
Proceedings of the 28th European Symposium on the reliability of electron devices, failure physics and analysis. Microelectron. Reliab. 76-77: 1-5 (2017) - [j31]Frédéric Escudié, Fabrice Caignet, Nicolas Nolhier, Marise Bafleur:
Prediction of LIN communication robustness against EFT events using dedicated failure models. Microelectron. Reliab. 76-77: 685-691 (2017) - [j30]Mouna Mahane, David Trémouilles
, Marise Bafleur, Benjamin Thon, Marianne Diatta, Lionel Jaouen:
New triggering-speed-characterization method for diode-triggered SCR using TLP. Microelectron. Reliab. 76-77: 692-697 (2017) - [j29]Zheng Jun Chew, Tingwen Ruan, Meiling Zhu, Marise Bafleur, Jean-Marie Dilhac:
Single Piezoelectric Transducer as Strain Sensor and Energy Harvester Using Time-Multiplexing Operation. IEEE Trans. Ind. Electron. 64(12): 9646-9656 (2017) - 2016
- [j28]Frédéric Escudié, Fabrice Caignet, Nicolas Nolhier, Marise Bafleur:
Impact of non-linear capacitances on transient waveforms during system level ESD stress. Microelectron. Reliab. 64: 88-92 (2016) - [c4]Zheng Jun Chew, Tingwen Ruan, Meiling Zhu, Marise Bafleur, Jean-Marie Dilhac:
A multifunctional device as both strain sensor and energy harvester for structural health monitoring. IEEE SENSORS 2016: 1-3 - 2015
- [j27]Marise Bafleur, Philippe Perdu, François Marc, Hélène Frémont, Nicolas Nolhier:
Editorial. Microelectron. Reliab. 55(9-10): 1269-1270 (2015) - [j26]Houssam Arbess, Marise Bafleur, David Trémouilles, Moustafa Zerarka:
Optimization of a MOS-IGBT-SCR ESD protection component in smart power SOI technology. Microelectron. Reliab. 55(9-10): 1476-1480 (2015) - [j25]Fabrice Caignet, Nicolas Nolhier, Marise Bafleur, A. Wang, Nicolas Mauran:
20 GHz on-chip measurement of ESD waveform for system level analysis. Microelectron. Reliab. 55(11): 2276-2283 (2015) - 2014
- [j24]Bertrand Courivaud, Nicolas Nolhier, Gilles Ferru, Marise Bafleur, Fabrice Caignet:
Reliability of ESD protection devices designed in a 3D technology. Microelectron. Reliab. 54(9-10): 2272-2277 (2014) - 2013
- [j23]Nicolas Monnereau, Fabrice Caignet, David Trémouilles, Nicolas Nolhier, Marise Bafleur:
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation. Microelectron. Reliab. 53(2): 221-228 (2013) - [j22]Fabrice Caignet, Nicolas Nolhier, Marise Bafleur, A. Wang, Nicolas Mauran:
On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress. Microelectron. Reliab. 53(9-11): 1278-1283 (2013) - [c3]Marise Bafleur, Jean-Marie Dilhac:
Towards Energy Autonomy of Wireless Sensors in Aeronautics Applications: SMARTER Collaborative Project. GreenCom/iThings/CPScom 2013: 1668-1672 - 2012
- [c2]Alexandru Takacs, Hervé Aubert, Marise Bafleur, Jean-Marie Dilhac, F. Courtade, S. Fredon, L. Despoisse, C. Vanhecke, G. Cluzet:
Energy Harvesting for Powering Wireless Sensor Networks On-Board Geostationary Broadcasting Satellites. GreenCom 2012: 637-640 - 2011
- [j21]Houssam Arbess, Marise Bafleur:
MOS-IGBT power devices for high-temperature operation in smart power SOI technology. Microelectron. Reliab. 51(9-11): 1980-1984 (2011) - [j20]Moustafa Zerarka, Patrick Austin, Marise Bafleur:
Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs. Microelectron. Reliab. 51(9-11): 1990-1994 (2011) - 2010
- [j19]J. Bourgeat, Christophe Entringer, Philippe Galy, Marise Bafleur, D. Marin-Cudraz:
Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm. Microelectron. Reliab. 50(9-11): 1379-1382 (2010)
2000 – 2009
- 2009
- [j18]Marianne Diatta, Emilien Bouyssou, David Trémouilles, P. Martinez, F. Roqueta, O. Ory, Marise Bafleur:
Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD). Microelectron. Reliab. 49(9-11): 1103-1106 (2009) - 2008
- [j17]Jinyu Jason Ruan, George J. Papaioannou, Nicolas Nolhier, Nicolas Mauran, Marise Bafleur, Fabio Coccetti, Robert Plana:
ESD failure signature in capacitive RF MEMS switches. Microelectron. Reliab. 48(8-9): 1237-1240 (2008) - 2007
- [j16]Yuan Gao, Nicolas Guitard, Christophe Salamero, Marise Bafleur, Laurent Bary, Laurent Escotte, Patrick Gueulle, Lionel Lescouzères:
Identification of the physical signatures of CDM induced latent defects into a DC-DC converter using low frequency noise measurements. Microelectron. Reliab. 47(9-11): 1456-1461 (2007) - [j15]A. Crosson, Laurent Escotte, Marise Bafleur, D. Talbourdet, L. Crétinon, Philippe Perdu, Guy Perez:
Long-term reliability of silicon bipolar transistors subjected to low constraints. Microelectron. Reliab. 47(9-11): 1590-1594 (2007) - [j14]Jinyu Jason Ruan, Nicolas Nolhier, Marise Bafleur, Laurent Bary, Fabio Coccetti, T. Lisec, Robert Plana:
Electrostatic discharge failure analysis of capacitive RF MEMS switches. Microelectron. Reliab. 47(9-11): 1818-1822 (2007) - 2006
- [j13]C. Lochot, Jean-Philippe Lainé, Marise Bafleur, A. Cazarré, J. Tasselli:
Potentialities of substrate-thinning technique to control minority carrier injection in smart power IC's. Microelectron. J. 37(8): 804-811 (2006) - [j12]Fabien Essely, Frédéric Darracq, Vincent Pouget, Mustapha Remmach, Felix Beaudoin, Nicolas Guitard, Marise Bafleur, Philippe Perdu, André Touboul, Dean Lewis:
Application of various optical techniques for ESD defect localization. Microelectron. Reliab. 46(9-11): 1563-1568 (2006) - 2005
- [j11]Nicolas Guitard, Fabien Essely, David Trémouilles, Marise Bafleur, Nicolas Nolhier, Philippe Perdu, André Touboul, Vincent Pouget, Dean Lewis:
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. Microelectron. Reliab. 45(9-11): 1415-1420 (2005) - 2004
- [j10]David Trémouilles, Marise Bafleur, Géraldine Bertrand, Nicolas Nolhier, Nicolas Mauran, Lionel Lescouzères:
Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency. IEEE J. Solid State Circuits 39(10): 1778-1782 (2004) - [j9]Nicolas Guitard, David Trémouilles, Marise Bafleur, Laurent Escotte, Laurent Bary, Philippe Perdu, Gérard Sarrabayrouse, Nicolas Nolhier, Roberto Reyna-Rojas:
Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications. Microelectron. Reliab. 44(9-11): 1781-1786 (2004) - [j8]Fabien Essely, Corinne Bestory, Nicolas Guitard, Marise Bafleur, A. Wislez, E. Doche, Philippe Perdu, André Touboul, Dean Lewis:
Study of the ESD defects impact on ICs reliability. Microelectron. Reliab. 44(9-11): 1811-1815 (2004) - 2003
- [j7]David Trémouilles, Géraldine Bertrand, Marise Bafleur, Felix Beaudoin, Philippe Perdu, Nicolas Guitard, Lionel Lescouzères:
TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology. Microelectron. Reliab. 43(1): 71-79 (2003) - [j6]Thomas Beauchêne, Dean Lewis, Felix Beaudoin, Vincent Pouget, Romain Desplats, Pascal Fouillat, Philippe Perdu, Marise Bafleur, David Trémouilles:
Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization. Microelectron. Reliab. 43(3): 439-444 (2003) - [j5]M. Zecri, P. Besse, Philippe Givelin, M. Nayrolles, Marise Bafleur, Nicolas Nolhier:
Determination of the ESD Failure Cause Through its Signature. Microelectron. Reliab. 43(9-11): 1551-1556 (2003) - 2002
- [j4]Marise Bafleur:
In the memory of Georges Charitat. Microelectron. Reliab. 42(8): 1153-1154 (2002) - 2001
- [j3]Géraldine Bertrand, Christelle Delage, Marise Bafleur, Nicolas Nolhier, Jean-Marie Dorkel, Quang Nguyen, Nicolas Mauran, David Trémouilles, Philippe Perdu:
Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology. IEEE J. Solid State Circuits 36(9): 1373-1381 (2001) - [j2]Romain Desplats, Felix Beaudoin, Philippe Perdu, Patrick Poirier, David Trémouilles, Marise Bafleur, Dean Lewis:
Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation. Microelectron. Reliab. 41(9-10): 1539-1544 (2001)
1990 – 1999
- 1999
- [j1]Christelle Delage, Nicolas Nolhier, Marise Bafleur, Jean-Marie Dorkel, Jo Hamid, Philippe Givelin, Jacques Lin-Kwang:
The mirrored lateral SCR (MILSCR) as an ESD protection structure: design and optimization using 2-D device simulation. IEEE J. Solid State Circuits 34(9): 1283-1289 (1999) - 1996
- [c1]Stelios Siskos, Theodore Laopoulos, Alkiviades A. Hatzopoulos, Marise Bafleur:
A current conveyor based BIC sensor for current monitoring in mixed-signal circuits. ICECS 1996: 1210-1212
Coauthor Index
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