Intrinsic MOSFET parameter fluctuations due to random dopant placement | IEEE Journals & Magazine | IEEE Xplore

IEEE Account

Purchase Details

Profile Information

Need Help?

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.

  翻译：