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Critical Charge Characterization for Soft Error Rate ...
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由 R Naseer 著作2007被引用 159 次 — In this paper we investigate the critical charge (Qcrit) required to upset a 6T SRAM cell designed in a commercial 90nm process.
(PDF) Critical Charge Characterization for Soft Error Rate ...
ResearchGate
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In this paper the authors investigate the critical charge (Qcrit) required to upset a 6T SRAM cell designed in a commercial 90nm process. The authors ...
[PDF] Critical Charge Characterization for Soft Error Rate ...
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The authors investigate the critical charge (Qcrit) required to upset a 6T SRAM cell designed in a commercial 90nm process and characterize Qcrit using ...
Critical-Charge-Characterization-for-Soft-Error-Rate- ...
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In this paper, we use 3D device simulations to characterize the Qcrit of a 6T SRAM cell designed for the 90nm technology, and determine the double-exponential ...
Critical charge calculations for a bipolar SRAM array
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Critical Charge Characterization for Soft Error Rate Modeling in 90nm SRAM · Random Dopant Effect on Vt Variations Affecting the Soft-Error Rates of Nanoscale ...
Characterizing SRAM and FF soft error rates with ...
ScienceDirect.com
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由 M Hashimoto 著作2019被引用 20 次 — This paper characterizes and discusses soft error rates of SRAM and flip-flops in the terrestrial environment.
SRAM in hold-operation: Modeling the interaction of soft- ...
IEEE Xplore
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由 A Kolhapure 著作2012被引用 2 次 — The critical-charge, obtained by using injection-current model of Freeman [1], of an SRAM cell is used to calculate the soft-error rate (SER). Simulation ...
Soft-Error-Aware Radiation-Hardened Ge-DLTFET-Based ...
MDPI
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由 P Raikwal 著作2023被引用 3 次 — In this paper, a soft-error-aware radiation-hardened 6T SRAM cell has been implemented using germanium-based dopingless tunnel FET (Ge DLTFET).
Modeling and Mitigation of Soft Errors in Nanoscale SRAMs
University of Waterloo
https://ece.uwaterloo.ca › ~cdr › pubs › phd_thes...
University of Waterloo
https://ece.uwaterloo.ca › ~cdr › pubs › phd_thes...
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由 SM Jahinuzzaman 著作2008被引用 15 次 — In addition, the model can estimate the improvement in critical charge when MIM capacitors are added to the cell in order to improve the soft error robustness.
177 頁
Soft-Error Rate of Advanced SRAM Memories: Modeling ...
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由 JL Autran 著作2012被引用 30 次 — If the charge deposited in the impacted drain is higher than the critical charge for this transistor type and for this technology, the corresponding memory ...