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Impact analysis of stochastic transistor aging on current ...
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由 SV Bussche 著作2011被引用 8 次 — This paper studies the impact of transistor degradation at the circuit level. Particular attention is paid to the change in matching characteristics. This ...
Impact analysis of stochastic transistor aging on current-steering ...
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The impact of transistor degradation at the circuit level is studied, with particular attention to the change in matching characteristics, which is critical ...
Impact analysis of stochastic transistor aging on current-steering ...
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This paper studies the impact of transistor degradation at the circuit level. Particular attention is paid to the change in matching characteristics. This ...
Impact analysis of stochastic transistor aging on current- ...
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由 SV Bussche 著作2011被引用 8 次 — This paper mainly deals with the effects of intrinsic degradation phenomena in 32nm CMOS, mostly Hot. Carrier (HC) degradation, Bias Temperature Instability ( ...
Simon Vanden Bussche
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Simon Vanden Bussche, Pieter De Wit, Elie Maricau, Georges G. E. Gielen : Impact analysis of stochastic transistor aging on current-steering DACs in 32nm ...
Aging of Current DACs and its Impact in Equalizer Circuits
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由 T Dhar 著作2021被引用 3 次 — This paper illustrates the impact of temporal degradations due to aging on current digital-to-analog converters (IDACs) within the context ...
Aging of Current DACs and its Impact in Equalizer Circuits
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由 T Dhar 著作被引用 3 次 — Abstract—This paper illustrates the impact of temporal degrada- tions due to aging on current digital-to-analog converters (IDACs).
Pieter De Wit
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Impact analysis of stochastic transistor aging on current-steering DACs in 32nm CMOS. ICECS 2011: 161-164; 2010. [c4]. view. electronic edition via DOI ...
Transistor aging-induced degradation of analog circuits
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Impact analysis of stochastic transistor aging on current-steering DACs in 32nm CMOS · Computer Science, Engineering. 2011 18th IEEE International Conference on…
Analog Circuit Reliability in Sub-32 Nanometer CMOS
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由 G Gielen 著作被引用 55 次 — Abstract—The paper discusses reliability threats and oppor- tunities for analog circuit design in high-k sub-32 nanometer technologies.