Radio Advance Epitaxy

#Semiconductor #IndiaSemicondoctorMission #SiC #widebandgap Odisha cabinet approves 50 per cent incentive package for RIR to set up India's first SiC semiconductor facility The Odisha state cabinet has approved a customized incentive package for RIR Power Electronics Limited to establish India’s first silicon carbide (SiC) semiconductor manufacturing facility in Bhubaneswar, with an investment of ₹618.60 crore. The incentive package has been increased from 30% to 50% to ensure project viability, bringing the total incentive to ₹110 crore, payable in two phases. RIR, India’s only silicon-based power device manufacturer, serves major clients like BHEL, ABB, and Indian Railways. The project, executed in two phases, will position Odisha as a semiconductor hub, fostering industrial growth and creating 750 jobs. Additionally, the state cabinet approved amendments to the Odisha Medical and Health Services (OMHS) recruitment rules. The changes include reducing OMHS grades from seven to six, increasing higher-grade posts, and providing advance annual increments for postgraduate and super-specialist medical officers to improve career prospects and promotions. Ref. New India Express Express News Service Updated on:  23 Jan 2025, 9:59 am RIR officials briefing Chief Minister Mohan Charan Majhi about the finished semiconductor products during the groundbreaking ceremony of the unit in BhubaneswarExpress

#SiC #widebandgapsemiconductor #semiconductor China Successfully Validates Domestically Produced SiC Power Device in Space China's first domestically developed high-voltage, radiation-resistant silicon carbide (SiC) power device has successfully completed space validation and in-orbit application within power systems. Compared to traditional silicon-based power devices, space power modules utilizing SiC have demonstrated a significant efficiency boost, increasing from 85% to 95%, while the power-to-volume ratio has improved fivefold, according to developers who spoke with the Global Times on Thursday. The SiC payload, a joint effort by the Institute of Microelectronics of the Chinese Academy of Sciences (CAS) and the Technology and Engineering Center for Space Utilization at CAS, was launched aboard the Tianzhou-8 cargo spacecraft on November 15, 2024. Since then, it has been undergoing scientific experimentation aboard the China Space Station. Power devices play a critical role in energy conversion and control, often regarded as the heart of power electronics systems. As silicon-based power devices near their performance limits, third-generation semiconductor materials such as SiC offer distinct advantages, including a wide bandgap and high breakdown field strength. These characteristics enable significantly improved power conversion efficiency, developers explained to the Global Times. Following over a month of in-orbit power-on testing, results confirmed that the SiC payload functioned normally. The high-voltage 400V SiC power device successfully completed testing and application verification, with both its static and dynamic parameters meeting expectations within the power system. Looking ahead, SiC power devices are expected to drive the advancement of space power systems, paving the way for next-generation technologies in China’s lunar exploration, manned moon landings, deep space missions, and other ambitious projects, developers stated.

#semiconductor #lithography #EUV #2nm #indiasemiconductor

#semiconductor #Indiasemiconductormission #India #SiC #Silliconcarbide #powerdevice India’s First Private Semiconductor Facility to Rise in Andhra Pradesh Indichip Semiconductors Ltd, in collaboration with its Japanese partner Yitoa Micro Technology (YMTL), has signed a groundbreaking agreement with the Andhra Pradesh government to establish India’s first private semiconductor manufacturing facility. The Rs 14,000 crore investment will fund the creation of a cutting-edge plant at the Orvakal Mega Industrial Hub in Kurnool, focusing on Silicon Carbide (SiC) chip production. Silicon Carbide Chips for Energy-Efficient Technologies The facility will primarily produce SiC chips, which are critical for energy-efficient technologies such as electric vehicles (EVs) and renewable energy systems. Initially, the plant will have a production capacity of 10,000 wafers per month, with plans to scale up to 50,000 wafers per month over the next two to three years. Supporting India’s ‘Atma Nirbhar Bharat’ Vision The initiative aligns with the Indian government’s 'Atma Nirbhar Bharat' (self-reliant India) mission by reducing reliance on imported semiconductors and bolstering domestic manufacturing capabilities. The Andhra Pradesh government has committed to providing the necessary land, infrastructure, and supportive ecosystem to ensure the project’s success. Government Support and Optimism The memorandum of understanding (MoU) was signed in the presence of Andhra Pradesh IT Minister Nara Lokesh and Industries Minister TG Bharat. Both ministers expressed confidence in the project’s transformative impact on the region. “This investment is a testament to Andhra Pradesh's ability to attract cutting-edge industries through innovative policies and robust infrastructure,” said IT Minister Lokesh. Industries Minister TG Bharat highlighted the project’s alignment with the state’s vision of becoming a manufacturing powerhouse. Economic and Technological Impact The semiconductor facility is expected to create thousands of direct and indirect jobs, drive technological innovation, and stimulate economic growth in the region. Additionally, it marks a major milestone in India’s ambition to establish itself as a global leader in semiconductor manufacturing, further enhancing its position in the high-tech industry. This development not only represents a significant leap forward for India’s semiconductor ecosystem but also sets a strong precedent for private-sector involvement in the nation’s high-tech manufacturing aspirations.

#GaN #Semiconductor #III_V #Widebandgap #Galliumnitride Chinese Firms Acquire Assets of Bankrupt Belgian Chip Manufacturer Chinese companies dominated the bankruptcy auction of BelGaN, Belgium's last industrial chip manufacturer, acquiring a significant portion of the firm's assets. BelGaN, based in Oudenaarde and known for its expertise in gallium nitride (GaN) technology, ceased operations in late 2024. The company had its beginnings in 2008 when ON Semiconductor acquired the Oudenaarde facility to produce semiconductors for automotive, industrial, and medical applications. In 2022, BelGaN took over the fab and pivoted to gallium nitride chips in an effort to revive its declining revenues. However, the transition failed to yield the expected results. Despite multiple offers, BelGaN's creditors were unable to secure a buyer, leading to the company's eventual collapse. The online auction of the firm's assets began in November 2024, raising approximately €23 million, as reported by The Brussels Times. A third of the equipment and resources were reportedly acquired by Chinese firms, sparking discussions among officials regarding export regulations. Authorities are now assessing which machinery can be shipped to China without a license and which exports will require special approvals. The fall of BelGaN marks the end of an era for Belgium's industrial chip manufacturing sector while highlighting China's growing influence in acquiring semiconductor technology worldwide.

#widebandgapsemiconductor #GaN #galliumnitride #HEMT #semiconductor #semiconductorprocessing #fabrication #Radiodevices #Advanceradioepitaxy TagoreTech to Launch Kolkata’s First Private RF Laboratory In a significant boost to Kolkata's hardware industry, Chicago-based TagoreTech is set to establish the city’s first private radio frequency (RF) laboratory. This announcement follows GlobalFoundries’ recent decision to set up a center in West Bengal, marking a period of rapid growth for the region’s semiconductor sector. TagoreTech was spun off as a dedicated RF entity from Tagore Technology before GlobalFoundries acquired the latter. The new RF lab in Kolkata will focus on engineering validation of RF chips designed at TagoreTech’s existing Kolkata center. Currently, the Defence Research and Development Organisation (DRDO) operates the only other RF laboratory in the city. Manish Shah, the Chief Technology Officer, Head of R&D, and co-founder of TagoreTech, highlighted the importance of the company’s RF chips in defense and communication technologies. “Our RF chips are critical for applications such as drones, radar systems, and jammers,” he explained. Shah emphasized the company’s commitment to innovation, stating, “Our R&D team is dedicated to addressing RF design challenges using wide-bandgap technologies. This enables us to accelerate the development of solutions for military and public safety communication systems, radar, drones, jammers, and 5G cellular infrastructure.” TagoreTech’s global footprint ensures that chips designed and validated in Kolkata will be deployed worldwide. While manufacturing will take place in Taiwan, the core design and validation processes will remain anchored in Kolkata. Looking ahead, Shah revealed plans for rapid expansion. “We will significantly increase our headcount at the Kolkata center as we scale up operations,” he said, underscoring the city’s growing importance in the global RF technology ecosystem. With this development, TagoreTech is set to position Kolkata as a key hub for advanced RF technology, paving the way for further advancements in India’s semiconductor and hardware industries. Ref. https://lnkd.in/gGMFcz4E

#GalliumNitride #GaN #III_V #Powersemiconductor #semiconductor #processing #powerchip Onsemi acquired the former NexGen Power Systems fabrication plant. onsemi, a global leader in semiconductor manufacturing, has purchased a chip fabrication facility in DeWitt, New York, for $20 million. The plant, originally built by the state of New York at a cost of $100 million, was sold along with its equipment as part of the deal. The Scottsdale, Arizona-based company plans to hire 80 to 100 employees to operate the facility, according to state officials. The 82,200-square-foot plant, located at 50 Collamer Crossings Parkway, was constructed by SUNY Polytechnic Institute with the intent to lease it to Soraa Inc., a startup LED lighting manufacturer. Soraa had pledged to create over 400 jobs but withdrew from the deal in 2017 before the building's completion. Following Soraa's exit, the property was taken over by Empire State Development and subsequently leased to NexGen, a California-based startup specializing in gallium nitride (GaN)-based semiconductors for power systems. NexGen ceased operations and filed for bankruptcy in late 2023, leaving the facility vacant. onsemi, which had acquired NexGen’s intellectual property and some of its equipment, recognized the value of the DeWitt plant due to its infrastructure suited for GaN semiconductor production. With this acquisition, onsemi plans to manufacture semiconductor components at the DeWitt facility, focusing on chips used in automotive and industrial automation applications. The company, which operates 20 manufacturing sites worldwide, reported revenues of $8.3 billion in 2023. The purchase marks a strategic move for onsemi, as the DeWitt plant complements its existing capabilities in gallium nitride technology, an essential component for next-generation power systems. The company has already begun advertising job openings for technicians and engineers to support the plant's operations. Despite the $20 million purchase price being significantly lower than the initial $100 million investment by taxpayers, state officials expressed optimism about the facility’s future under onsemi’s leadership, emphasizing the potential for job creation and technological advancement in the region.

#widebandgapsemiconductor #GaN #galliumnitride #HEMT #semiconductor #semiconductorprocessing #fabrication Isolation of 2DEG in AlGaN/GaN Heterojunctions via Argon Ion Implantation Argon ion implantation has emerged as a cost-effective industrial technique for electrically isolating the two-dimensional electron gas (2DEG) in adjacent AlGaN/GaN high-electron-mobility transistors (HEMTs). Researchers from the Università di Catania and STMicroelectronics investigated this method to isolate the 2DEG using various ion energies and annealing conditions. The heterostructures studied consisted of an 18 nm Al₀.₂Ga₀.₈N layer grown on carbon-doped n-type GaN. Argon ion implantation was performed at energies of 15, 22.5, and 60 keV with a fluence of 7 × 10¹³ cm⁻². Post-implantation, the samples were annealed at temperatures of 600 °C, 750 °C, and 900 °C to evaluate the thermal stability of crystal damage and 2DEG isolation. Photoluminescence (PL) spectroscopy and capacitance-voltage (C-V) profiling, using mercury probe analysis, were employed to analyze the results. The findings revealed that argon ion implantation caused a significant decrease in the PL peak intensity associated with band-edge radiative recombination in GaN, confirming crystal lattice damage due to ion bombardment. This damage correlated with a substantial reduction in 2DEG carrier density—by approximately six orders of magnitude compared to unimplanted samples. Remarkably, the isolation of the 2DEG and the associated carrier density suppression remained stable even at annealing temperatures up to 900 °C. This study highlights the effectiveness and thermal robustness of argon ion implantation as a practical solution for 2DEG isolation in AlGaN/GaN heterojunctions, making it a valuable tool for HEMT fabrication. Ref. https://lnkd.in/gRrUKJZa

#SiC #GaN #Semiconductor #Technology SICC Unveils 300-mm SiC Wafer Amid the ongoing industry transition from 150-mm to 200-mm SiC substrates, SICC has made a groundbreaking announcement at Semicon Europa with the introduction of a 300-mm SiC substrate. This marks the largest and most advanced substrate technology in the compound semiconductor industry. According to Markus Behet, the wafer is just 1 mm thick for transport reasons, demonstrating the precision and innovation driving this development. This milestone highlights SICC’s leadership in pushing the boundaries of SiC technology, which is critical for advancing applications in power electronics and beyond.