[en] The implantation of Au into Al₂O₃ leads to disruption of the crystal order producing an amorphous layer. Annealing the implanted crystals at 1,373 K restores the crystallinity and also imparts a purple color to the implanted layer which is attributed to a surface plasmon resulting from the formation of Au colloids

[en] Single crystal diamond has been implanted at 1 MeV with 2 x 10²⁰ Ar/m². Rutherford backscattering spectrometry in a channeled geometry revealed a broad amorphized region underlying a thin, partially crystalline layer. Raman spectroscopy disclosed modifications in the bonding characteristic of the appearance of non-diamond carbon. The complementary nature of the two analysis techniques is demonstrated. The Knoop hardness of the implanted diamond was reduced by implantation

[en] Single crystals of silicon and diamond were implanted at 300K with 70 keV ³He. Ion channeling analyses were executed by application of Rutherford backscattering spectrometry and nuclear reaction analysis. Helium exhibits a non-random lattice site in the channeling angular distributions for silicon and diamond. A major fraction of the implanted He was qualitatively identified to be near to the tetrahedral interstice in both materials

[en] In situ electron irradiation has been carried out in transmission electron microscopes to monitor the dynamic evolution of α-quartz during the transition to the metamict state from the crystalline state. Crystals of different orientations were examined. HREM images were digitized and Fourier transformed to monitor degradation of periodicities. The final uniform metamict structure was characterized by radial distribution functions obtained from energy-filtered electron diffraction

[en] Cross-sectional transmission electron microscopy was used to study diffusion-induced grain boundary migration (DIGM) in irradiated and annealed Au/Cu bilayers. Using this technique, in combination with small probe X-ray energy dispersive spectroscopy, DIGM alloyed zones in Au were identified in an irradiated sample

[en] This paper reviews recent developments of plasma immersion ion implantation (PIII) for semiconductor applications: ultra-shallow junction formation, microscopic conformal doping, metallization, and impurities gettering. The authors also discuss semiconductor processing issues with PIII: reactor design, wafer charging, surface deposition/etching, and secondary electron emission

[en] Melting velocities were measured in thin gold films by performing pump/probe transmission measurements using a unique picosecond excimer pump and dye laser probe. Monitoring the depth of the liquid by changes in the near psuedo-Brewster's angle transmission allowed for direct measurement of crystal/melt interfacial velocity up to 1,500 m/s

[en] Experiments were performed demonstrating that ion irradiation enhances diffusion induced grain boundary migration (DIGM) in polycrystalline Au/Cu bilayers. Here, a model is presented relating film-averaged Cu composition in Au with treatment time, grain size and film thickness. Application of this model to the experimental results indicates that irradiation enhances DIGM by increasing the grain boundary velocity. The effects of DIGM and irradiation-induced grain growth on the temperature dependence of ion mixing in bilayers are discussed

[en] Computer simulation is a major tool for studying the interactions of swift ions with solids which underlie processes such as particle backscattering, ion implantation, radiation damage, and sputtering. Numerical models are classed as molecular dynamics or binary collision models, along with some intermediate types. Binary collision models are divided into those for crystalline targets and those for structureless ones. The foundations of such models are reviewed, including interatomic potentials, electron excitations, and relationships among the various types of codes. Some topics of current interest are summarized. 169 refs., 3 figs

[en] Single crystals and epitaxial films of SiC - 4H and 6H were implanted at an energy of 40 and 90 KeV by ions of Al at various temperatures and high dose. The implanted layers were studied before and after annealing by Raman scattering, Auger electron spectroscopy and SIMS. Results of this investigation show intensive graphitization of the implanted layer surface, the formation of great associations of defects in the implanted layer and shallow defects. It was found that recrystallization of the implanted layer pushes out a considerable part of aluminum atoms. The nature of the processes in silicon carbide during implantation and annealing is discussed