[en] This conference details with the topics relevant to condensed matter physics. Papers relevant to INIS are indexed separately

[en] Physical properties of crystalline materials are sensitive to crystal structure and microstructures. It is also well established that properties of nanocrystalline solids are significantly different from their bulk counterparts. That is size matters. It is further noticed that properties are also sensitive to shape (morphology) of the materials. That is like size, shape of nanocrystals plays an important role in controlling properties of crystalline solids. In the presentation, chemically grown different metal oxides and their composites with different morphologies will be highlighted through HRTEM and FESEM images. Microstructure characterization employing Rietveld refinement using XRD data of these oD, 1D and 2D nanocrystals will be presented. (author)

[en] Semiconductor optical amplifier (SOA) is a versatile gain medium. It shows cross gain modulation, cross polarization modulation or four wave mixing in nonlinear devices. In this communication, the variation of gain with time, control pulse energy and variation of gain with control pulse energy are studied. The time dependent gain satisfies temporal rate equation, which are solved using mat lab. (author)

[en] Compton scattering is widely used as a unique and a very powerful tool for the investigation of electronic structure of materials of diverse nature. In this radiation interaction (Compton effect) process, materials behave as a metamaterial because of plasmon excitation. In solid-state plasmas (ε <0, μ >0), the square of the refractive index (RI), i.e., n² becomes negative, which leads to reflection of waves from such a medium with higher frequency as in the case of inverse Doppler effect in radio waves and X-rays. Substances with negative ε and μ have some properties which differ from those of substances with positive ε and μ

[en] Simulation procedure is applied for estimating the current voltage characteristics of a voltage current control tunnel-thin insulator-semiconductor system. Different physical models are discussed and is compared with the simulation results with the calculated data and from the literature available for several different structures. The present calculation is concentrated on electrical characteristics of for the different combinations of metal or single-layer insulated and semiconductor with any doping type and level. (author)

[en] Interface roughness dynamics connected with various physical processes have been studied through novel microscopic models in connection with experiments. The statistical properties of such rough interfaces appearing in wide range of physical systems are observed to belong in different universality classes characterized by the scaling exponents. With the advancement of characterization techniques, the scaling exponents of thin film surface (or the morphological evolution of amorphous surfaces eroded by ion bombardment) are easily computed even in situ during the growing (erosion) conditions. The relevant key physical parameters during the dynamics crucially control the overall scaling behavior as well as the scaling exponents. The non-universal nature of scaling exponents is emphasized on the variations of the physical parameters in experimental studies and also in theoretical models. (author)

[en] We have analytically explored the quantum phenomenon of particle scattering by harmonically trapped Bose gases with the short ranged Fermi-Huang delta interactions among the incident particle and the scatterers. We have predicted differential scattering cross-sections and their temperature dependence in this regard. Coherent scattering even by a single boson or fermion in the finite geometry gives rise to new tool of determining energy eigenstate of the scatterer. Our predictions on the differential scattering cross-sections can be tested within the present day experimental setups, specially for (i) 3D harmonically trapped interacting Bose-Einstein condensate (BEC), (ii) BECs in a double well, and (iii) BECs in an optical lattice. (author)

[en] We consider ultracold Bose gases in quasi-periodic potentials. The system can support bound states confined either in single lattice site or extended over many lattice sites. Considering both interacting and non-interacting cases we calculate Shannon information entropy in momentum and coordinate spaces. We see that the difference between coordinate- and momentum- space entropies becomes more negative with the increase of localization. The maximally localized state is, however, found to attain minimum information entopic uncertainty. (author)

[en] The problem of analytical integration involving powers and derivatives of the Fermi function is frequently encountered in many theoretical analyses. To tide over this difficulty, an alternative model for the F.D. distribution function has been proposed. The model is apparently more convenient, because using this model one can now analytically evaluate the integrals much easily, and that too without incurring significant errors in the subsequent results. To assess the extent of validity of the assumed distribution function, the proposed model has been compared with the exact F.D function. The result seems to be satisfactory and motivate us for further analysis of low temperature electron transport in semiconductors using the proposed distribution function. The energy domain is divided into three regions, demarcated on both the sides of the Fermi energy, and the Fermi function is approximated for each regime. (author)

[en] At some point in present days, with the advent of MBE, MOCVD, FLL and other experimental technique, low dimensional structures having quantum confinement in one, two and three dimensions such as ultra thin films, inversion layers, quantum wires and dots, have attracted much attention, not only for their potential in uncovering new phenomena in nanostructured electronics but also for their interesting devices application in heterostructure based various materials, that are being currently studied because of the enhancement of carrier mobility and such quantum confined systems find ex-digital networks, optical modulators and also in other devices. The importance of studying is in the field (Fermi-Dirac statistics) of semiconductors science. In this paper, it will be of much more interest, to investigate the Fermi-Dirac distribution function under the condition of carrier degeneracy, since it will help my revise in transport coefficients and electron dynamics in electronic devices made of degenerate semiconductors. (author)