[en] In this paper, we show that the growth of III-antimonides can occur via self-catalysis using either group III metal or Sb clusters at their tips. Specific experiments using GaSb and InSb systems show that bulk nucleation and growth of the respective antimonide wires can also occur from mm-sized droplets. The role of equilibrium solubility and the size of the droplet on bulk nucleation versus tip-led growth is discussed

No abstract available

[en] Microgravity studies on the dissolution and crystallization of InGaSb were done with a sandwich combination of InSb and GaSb (111) as the starting material using a Chinese recoverable satellite. The same experiments were performed under normal gravity condition for comparison. The shape of the solid/liquid interface and compositional profiles in the solution were found to be significantly affected by gravity. To study the effect of gravity on the solid/liquid interface and composition profiles, a numerical simulation has been done. Formation of spherical projections on the surface of InGaSb during its crystallization was in-situ observed using a high speed CCD camera in the drop experiment. Spherical projections showed dependence of gravity its growth. Indium compositions in the spherical projections were found to vary depending on the temperature (Authors)

[en] The electronic band structure and optical gain of an InAs/GaSb/InSb short-period superlattice laser diode on a GaSb substrate are numerically investigated with an accurate 8 x 8 k.p model. Using a realistic graded and asymmetric interface profile, we obtain a reasonable agreement on band gap energy with our experimental data extracted from laser emissions performed on the laser diode. The optical performance in terms of optical gain is then calculated for the laser structure and we demonstrate the utility of interface design to model short-period superlattice structures.

[en] A Bridgman set-up has been modified to perform the contactless growth ('dewetting') of gallium and indium antimonide compounds in fused silica crucibles. According to wetting parameters measured by the sessile drop method given in the literature, both molten InSb and GaSb compounds are considered as non-reactive with silica substrates. A detailed description of the experimental set-up is presented. Each polycrystalline sample is inserted in a sealed silica crucible that is backfilled with industrial argon containing a few ppm of oxygen. Under similar experimental conditions, the dewetted growth of GaSb is much easier to obtain than that for InSb. The presence of residual impurities such as oxygen in the backfilling gas appears to enhance the occurrence of the phenomenon for GaSb

No abstract available

[en] We try to synthesize In_xGa_1−xSb nanowires on silicon (100) substrate using InSb and GaSb as source materials and we succeeded. Au film was used as catalysts. The experiment is simple and repeatable. The diameter of the grown nanowires is 60–200 nm and up to 10 microns in length. The grown nanowires have good crystallinity. Due to the doping of indium, we found that the XRD peaks of nanowires were shifted. We have fabricated fully nanostructured device using ultra-long Ag nanowires as electrodes for the I–V characteristic study, and found that the device has photoresponse characteristics and the I–V characteristic curve was asymmetric, we explain that it was due to the asymmetry of this fully nanostructured devices.

[en] A series of InSb thin films were grown on GaAs substrates by molecular beam epitaxy (MBE). GaSb/AlInSb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer, so as to reduce the system defects. At the same time, the influence of different interface structures of AlInSb on the surface morphology of buffer layer is explored. The propagation mechanism of defects with the growth of buffer layer is compared and analyzed. The relationship between the quality of InSb thin films and the structure of buffer layer is summarized. Finally, the growth of high quality InSb thin films is realized. (paper)

[en] The electrostatic performance of p-type nanowires (NWs) made of InSb and GaSb, with special focus on their gate capacitance behaviour, is analysed and compared to that achieved by traditional semiconductors usually employed for p-MOS such as Si and Ge. To do so, a self-consistent $\mathit{k}\cdot <!--\; ???\; -->\mathit{p}$ simulator has been implemented to achieve an accurate description of the valence band and evaluate the charge behaviour as a function of the applied gate bias. The contribution and role of the constituent capacitances, namely the insulator, centroid and quantum ones are assessed. It is demonstrated that the centroid and quantum capacitances are strongly dependent on the semiconductor material. We find a good inherent electrostatic performance of GaSb and InSb NWs, comparable to their Ge and Si counterparts making these III-Sb compounds good candidates for future technological nodes. (paper)

No abstract available