[en] The electric properties of cholesteryl laurate and cholesteryl caprilate mixtures (75:25%, 50:50%, 25:75% by weight) are investigated. Activation energies for conduction were determined from the Arrhenius plots ln I f(1/T), as well as temperature intervals characteristic for different mesophases. It was shown that these mixtures exhibit a storage effect associated to a negative resistance in a certain temperature range. (author)

[en] Highlights: • Fabricating the ternary (1-x)K_0.5Na_0.5Nb_1-ySb_yO₃-zSrZrO₃-xBi_0.5Na_0.5HfO₃ ceramics by the conventional solid-state reaction method; • Constructing R-O-T multiphase coexistence in the range of 0.03£x£0.05, 0.04£y£0.06, 0.01£z£0.025; • Attaining the high d₃₃ (470 ± 5 pC/N) and a relatively high T_C (244 °C). (1 − x)K_0.5Na_0.5Nb_{1 − y}Sb_yO₃-zSrZrO₃-xBi_0.5Na_0.5HfO₃ (KNNS-SZ-BNH) lead-free ceramics were developed by the conventional solid-state reaction method. Effects of the additives (Bi_0.5Na_0.5HfO₃, SrZrO₃ and Sb⁵⁺) on their phase structure, microstructure, and electrical properties were investigated. The rhombohedral-orthorhombic-tetragonal (R-O-T) phase boundary can be established in the ceramics with 0.03 ≤ x ≤ 0.05, 0.04 ≤ y ≤ 0.06, and 0.01 ≤ z ≤ 0.025, and then their piezoelectric properties were improved. The ceramics with x = 0.03, y = 0.04 and z = 0.01 possess the optimum piezoelectric properties (d₃₃ = 470 ± 5 pC/N, k_p = 0.51 ± 0.02, and T_C = 244 °C). We believe that R-O-T multiphase coexistence is mainly responsible for the enhancement of piezoelectric properties.

[en] In the present work was given the electrical properties of TlInTe₂ monocrystals at different temperatures and the effects of gamma radiation on these properties. TlInTe₂ monocrystals were obtained by Bricmen method. Before and after irradiation, the voltage-amplifier (VAX) characteristics of the samples in the dark as well as the temperature dependence of the electrical conductivity were investigated. Measurements were carried out in the direction of the perpendicular to the c axis of the crystal. The samples were irradiated by the gamma rays with a ⁶⁰Co isotope source. It has been determined from the VAC of the sample before irradiation that the electrical conductivity in the dark at a voltage range of 0.02-40 V at temperature of 300 K remained practically constant part and then increases poorly.

[en] Organic–inorganic hybrid material, aniline-functionalized bismuth oxide nanoparticles, has been synthesized using a two-step wet-chemical synthesis method and characterized by different optical, microscopy and surface analysis techniques. The material was applied as an active device component to demonstrate the electrical property of the device. The device exhibited a nonvolatile, resistive switching performance with a constant ON–OFF current ratio. The nonvolatile behaviour was confirmed by applying a 6 V of read pulse for 0.1 s after every 60 s with the duty-cycle of 0.16% for 2 × 10³ s. To check the endurance of ‘ON’ and ‘OFF’ states of the system, a bias of 6 V (read pulse) was applied to the device for 0.2 s with a duty-cycle of 50% for 10³ cycles and the device showed the potential for storing and processing the data in a binary approach and differentiate between the ON and OFF states with the ratio of ~ 10². The current–voltage characteristics of the device in both the ON and OFF states are fitted with the Poole–Frenkel emission.

[en] Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems. (fast track communication)

[en] Electrical property is an important problem in the field of natural science and physics, which usually involves potential, current and resistance in the electric circuit. We investigate the electrical properties of an arbitrary hammock network, which has not been resolved before, and propose the exact potential formula of an arbitrary m × n hammock network by means of the Recursion-Transform method with current parameters (RT-I) pioneered by one of us [Z. Z. Tan, Phys. Rev. E 91 (2015) 052122], and the branch currents and equivalent resistance of the network are derived naturally. Our key technique is to setting up matrix equations and making matrix transformation, the potential formula derived is a meaningful discovery, which deduces many novel applications. The discovery of potential formula of the hammock network provides new theoretical tools and techniques for related scientific research. (paper)

No abstract available

[en] The diffusion coefficient of tellurium in silicon is measured. The concentration distribution of tellurium is determined by the method of the sheet resistence and the junction depth through the oxide layer, and by the measurement of the sheet resistence and sheet hall coefficient as a function of temperature. The temperature dependence of the diffusion coefficient of Te with the energy level of 0.14+-0.01eV below the conduction band edge in silicon can be expressed: D=1.1x10sup(-2)exp[-(2.6+-0.2)eV/kT] cm₂/sec (Author)

[en] The effects of the atomic configuration of the epitaxial Ge(1 1 1)/La₂O₃(0 0 1) interface on the electrical properties of the structure were studied using first-principles calculations. The interface stability of this heterostructure is susceptible to the atomic configuration of the interface. The Ge–O-bonded interface without interfacial gap states is generally more stable than the Ge–La-bonded interface, which involves interfacial gap states. The band alignment is affected by the charge transfer depending on the interface atomic configuration, and the band bending across the La₂O₃ region was observed due to the electronic dipole inside the La₂O₃. (paper)

No abstract available