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Results 1 - 10 of 1940
Results 1 - 10 of 1940.
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[en] This paper discusses the fabrication of Si(Li) detector and the characteristics of silicon suitable for this purpose. The p-type silicon used has a resistivity of 2 k Ω-cm and (111) orientation. The thickness of the depletion region in Si(Li) fabricated was measured to be 2.64 mm using copper staining technique. This detector gives a resolution of 6.1% and 2.8% respectively, for 6.4 keV and 14.376 keV photons from 57Co source when the FET preamplifier was cooled at liquid nitrogen temperature. (author)
Journal
[en] Short communication
Journal
[en] The pressure effect on the Kβ/Kα intensity ratio of Zn is investigated using a high-resolution Si(Li) detector at photon excitation energy of 59.5 keV. Experimental results were compared with various theoretical and experimental values in literature
Journal
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms; ISSN 0168-583X; 
; CODEN NIMBEU; v. 197(1-2); p. 39-42
; CODEN NIMBEU; v. 197(1-2); p. 39-42
No abstract available
Journal
Transactions of the American Nuclear Society; ISSN 0003-018X; ; v. 33 p. 692-693
; v. 33 p. 692-693
[en] Published in summary form only
Journal
No abstract available
Journal
Zhurnal Tekhnicheskoj Fiziki; ISSN 0044-4642; ; v. 50(2); p. 427-428
; v. 50(2); p. 427-428
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