[en] A Schottky diode with configuration Au/Carmine/p-Si/Al has been fabricated and it has been seen that the thin film on the p-Si substrate has exhibited a good rectifying behavior. The current-voltage (I-V) characteristics of the device have been investigated in dark before electron irradiation and under white light illumination and after 12 MeV electron irradiation with fluency of 3x10¹² e^-/cm². It has been seen that the device is sensitive to illumination and to electron irradiation. The barrier height value has decreased under illumination. The ideality factor and series resistance values have increased by 12 MeV electron irradiation. Furthermore, it has also seen that the reverse bias current and capacitance of the device have decreased after electron irradiation. This has been attributed to decrease in net ionized dopant concentration with electron irradiation.

[en] Developed and analyzed silicon-based photo detector with high sensitivity integrated in the short range. The effect of gamma radiation on the mechanism of current transport in the structure type Schottky barrier, and in the p-n junctions. It is shown that the double-barrier structure can improve the photovoltaic parameters of conventional detectors. We studied the effect of gamma radiation on the origin of the current mechanism in the structure as a whole, and in the Schottky barrier in the p - n - transitions separately. Also studied the effect of radiation on the photoelectric and photoluminescence parameters of the two barrier structure. Shown that two barrier structures can improve the photoelectric parameters of conventional detectors. The photo detector on the basis of silicon with the increased integrated sensitivity in short-wave area of a range is developed. Influence radiation scale on the mechanism of a currents of both in structure like Schottky s barrier, and in p - Π - transitions is investigated. It is shown that two barrier structures allow to improve photo-electric parameters of traditional detectors. Investigated the impact of radiation on the photoelectric and photoluminescence parameters of two-barrier structures.

[en] Published in summary form only

[en] Highlights: • Shottky diodes are one of the important components of electronic systems. • Very important to determine the parameters of the diodes according to the area they will be used. • One of the most important of these parameters is the current-voltage characteristic of the diode. • This study is a valuable study aimed at filling this gap in the literature. Shottky diodes are one of the important components of electronic systems. Therefore, it is very important to determine the parameters of the diodes according to the area in which they will be used. One of the most important of these parameters is the current-voltage characteristic of the diode. In this study, firstly, current values of the Schottky diode in the voltage range of −2 V to +3 V are experimentally measured in the temperature range of 100–300 K. In order to estimate the current-voltage characteristic of Shottky diode at different temperatures, a multi-layer perceptron, a feed-forward back-propagation artificial neural network was developed using 362 experimental data obtained. In the artificial neural network where temperature (T) and voltage (V) values are selected as input variables and the hidden layer has 15 neurons, the current (I) value is obtained as output. The results obtained from the artificial neural network have been found to be in good agreement with the experimental data of the Schottky diode.

[en] In this paper, we discussed the photolithography process optimization ofsilicon (Si) back-to-back schottky diode (BBSD) using the photolithographysystem available at Semiconductor Nuclear Detector Fabrication Laboratoryin Malaysian Nuclear Agency. the parameters affecting BBSD patterndeveloped on Si sample or substrate from identical to the BBSD pattern onthe photomask are thoroughly analyzed and an economic approachimproving the photolithography process is presented. (author)

[en] The formation of the potential barrier at the metal-silicon contact has been investigated. Special emphazis was given to the study of ageing of gold-N type silicon Schottky diodes, showing that their electrical properties are directly correlated to oxygen diffusion through the metal. A phenomenological model based on the behavior of oxygen with respect to the metal involved is proposed to describe the ageing for any metal deposited on N or P type silicon

[en] We propose a giant magnetoresistance (GMR) device, which can be experimentally realized by depositing two ferromagnetic (FM) strips and a Schottky metal (SM) stripe in parallel configuration on top of the GaAs heterostructure. The GMR effect ascribes a significant electron transmission difference between the parallel and antiparallel magnetization configurations of two FM stripes. Moreover, the MR ratio depends strongly on the magnetic strength of the magnetic barrier (MB) and the electric barrier (EB) height induced by an applied voltage to the SM stripe. Thus, this system can be used as a GMR device with tunable MR by an applied voltage to SM stripe or by magnetic strength of the MB.

[en] Recessed channels were used in scaled dopant-segregated Schottky barrier MOSFETs (DS-SBMOS) to control the severe short-channel effect. The physical operation and device scalability of the DS-SBMOS resulting from the presence of recessed channels and associated gate-corners are elucidated. The coupling of Schottky and gate-corner barriers has a key function in determining the on–off switching and drain current. The gate-corner barriers divide the channel into three regions for protection from the drain penetration field. To prevent resistive degradations in the drive current, an alternative asymmetric recessed channel (ARC) without a source-side gate-corner is proposed to simultaneously optimize both the short-channel effect and drive current in the scaled DS-SBMOS. By employing the proposed ARC architecture, the DS-SBMOS devices can be successfully scaled down, making them promising candidates for next-generation CMOS devices. (paper)

[en] It is known that the regeneration of EL2 is thermally activated and accelerated by free electrons. Here, we have observed on n-type Schottky diodes, under zero bias voltage, an 'Auger' regeneration induced by free electrons which are present at the edge of the depletion zone. (author) 8 refs., 3 figs

No abstract available