No abstract available

[en] Coating of Ti-6Al-4V alloy with Ti-C/Ti-N/Ti multi-layered films was examined by magnetron DC sputtering, aiming at the application of the alloy to artificial joints, in order to improve not only the biocompatibility and the abrasion resistance of the alloy but also the adhesion between the deposited film and the alloy, preserving the high hardness of such ceramic coatings. According to AES in-depth profiles, it was confirmed that a Ti-C/Ti-N/Ti multi-layered film had formed on the alloy. The multi-layered film appeared to be uniform and adhesive while Ti-C monolithic film deposited directly onto the alloy peeled off partly, concluding that the multi-layered film was more adhesive to the alloy than the monolithic film. (Author) 10 refs

[en] The SNICS (Source of Negative Ions by Cesium Sputtering) ion source is employed to produce negative ion beams in FOTIA. There are three major components of the SNICS ion source. The Conical Ionizer is a key component of the source

[en] The main directions in experimental, theoretical and computer studies of sputtering of solids under ion bombardment are analyzed. It is emphasized that there is a close relation between these studies and practical applications of sputtering. (author)

[en] Ultra-thin semiconductors and metal films have gained high technological importance in recent years. Sputtering is considered to be the preferable way for industrial thin semiconductor systems preparation. The main goal of our work was to develop a sputtering based method suitable for fine electronic and opto-electronic applications. The basic idea behind the developed method was to create a plane of gas discharge placed between the sputtering target and the growing film in order to enable the sputtered atoms to reach the substrate without collisions. Thus, the shape of the created plasma is viewed as a thin wall. The work was devoted to the modeling and practical implementation of the novel sputtering method. The mean free path of the gas molecules in the vacuum chamber is chosen as the critical parameter that defines the type of the sputtered particle transport and the level of the gas pressure used in the vacuum chamber. The properties and behavior of the plane plasma are considered under the conditions of ballistics (collisionless) and boundary transfer of the sputtered atoms (taking into account the diffusion part as well). The basic properties of the plane plasma were experimentally studied with the Langmuir probe introduced in plasma. The evaluation of electron temperature and ion concentrations was done using the Bohm approximation for collisionless conditions, which were created in the designed system. The measurements were taken in a gas pressure range from 0.2 mTorr up to 5 mTorr in various points of the vacuum chamber: along the plasma plane and in its vicinity. It was found that the electrons with the maximum temperature of about 7-7.5 eV occur along the plasma plane. Positive argon ion concentration was found to vary in the range from 3.5x10¹¹ cm^-3 to 6x10¹¹ cm^-3 on the plasma axis, depending on the gas pressure. The substrate in the novel system is completely protected from the plasma and the electron irradiation. The substrate temperature does not exceed 60 degree C during 1 hour of operation. Titanium and silicon were tested as sputtering targets. The deposition rates for these materials were 60 Angstrem/min and 100 Angstrem/min, respectively, with the applied power not exceeding 50 W. All of the electrical supplies were isolated from ground, to protect against parasitic discharges in the vacuum chamber

[en] A description of an ion source for solid elements is given. The material from which an ion ought to be obtained, is mechanically sputtered and in the form of powder is dosed into an arc discharge chamber of the ion source. (Author)

No abstract available

[en] A system making use of matrix isolation techniques in the elucidation of the sputtering process has been developed and is described. A stable beam of positive ions produced with a commercially available sputter ion gun impinges on a target. The matrix-isolated back-sputtered products are collected on a cryogenically cooled optical plate for spectroscopic observation. The system can be used to identify atomic and molecular sputtered products and to measure sputtering yields. For demonstration purposes, the spectra of sputtered gold atoms in a deuterium matrix and sputtered molybdenum atoms in an argon matrix are shown

No abstract available

[en] Conventional magnetron sputter deposition with a rf inductively coupled plasma (ICP) has demonstrated that ionized metal fluxes can be effectively utilized to fill trenches and vias with high aspect ratios. The ICP is created with a seven turn (1/2 wavelength), water cooled coil located between the magnetron cathode and the substrate. A large fraction of the metal atoms sputtered from the magnetron cathode are ionized by the ICP. These ions are accelerated across the sheath toward the substrate and deposited at normal incidence, by placing a negative bias on the substrate. A gridded energy analyzer configured with a quartz crystal microbalance is located in the center of the substrate plane to determine the ion and neutral deposition rates. While keeping the magnetron power, rf coil, target to substrate distance, pressure and diagnostic location constant, the ionization fraction was measured for two metal targets: Cu and Ti using three different working gases: Kr, Ar and Ne. Variations in target materials and working gases are shown to have an effect on ionization and deposition rates. The ionization rate is a sensitive function of the metal's ionization potential. The electron energy distribution in the plasma is affected by the sputtered metal and the working gases' ionization potential. (c) 2000 American Vacuum Society