[en] Rapid thermal vacuum processing (RTVP) has been used to form titanium silicide (TiSi₂). The time/temperature window offered by this technique enables the various phases (Ti₅Si₄, TiSi and TiSi₂) to be observed using Rutherford backscattering techniques. Furthermore the kinetics of formation found using this approach lead to an activation energy of ∼ 1.7 eV but with a reaction rate constant almost an order of magnitude larger than previously reported data. We also report on a reaction delay time that is consistent with the pre-disilicide phase formation

[en] It is shown that the titanium nitride film has a diffusion barrier property, which makes it possible to obtain high-quality titanium silicide films. (authors)

[en] The results are presented of the rapid thermal process influence (RTP) on the metallization buses structure, formed on the TiSi₂ basis. It is shown, that TiSi₂, formed with the RTP application, possesses a superior conductivity and is more resistant to the electro-migration processes as compared with TiSi₂, obtained with application of the two-stage continuous thermal process. (authors)

[en] The mechanical properties and oxidation resistance of HIPed Ti₅Si₃ measured. HIPing submicron size powder compacts produces a crack-free, fine grain microstructure with significantly higher hardness and toughness than a coarse grain microstructure which contains microcracks within larger grains. Oxidation resistance is also influenced by the grain size. Coarse-grained material has much lower mass gain in an oxidizing atmosphere and exhibits parabolic oxidation kinetics. Fine-grained material shows higher mass gain. The oxidation resistance of fine grained material was measured from 700 degree C-1000 degree C in air. At 700 degree C the mass gain at 120 hours is 0.07 mg/cm². At 900 degree C cracking of the scale leads to linear oxidation kinetics and significantly higher mass gain

[en] In this work, the titanium germanosilicide (TiSiGe_x) superlattice (SL) has been successfully fabricated. A monolayer of silicon atoms and bilayer of inversed titanium silicide constructed this novel superlattice periodically. A localized strain field has been found as a crucial factor via high resolution Annular Dark Field Scanning Transmission Electron Microscope (ADF-STEM) images, being generated by gradual segregation of germanium atoms. Germanium atoms would be excluded during the formation of the transition silicide. This phenomenon could be interpreted by thermodynamic preference. There was a substitution reaction between silicon and germanium, resulting from similar atomic volumes of both. In other words, germanium segregation pathway was based on where substitution occurred. Eventually, the excluded germanium atoms tended to accumulate at the boundary of TiSiGe_x-SL, contributing to a discontinuous thin film layer.

No abstract available

[en] This paper discusses the occurrence of crystallites on the surface of low resistivity C54 titanium silicide thin films, which will influence the estimation of contact resistance in multi-layer ohmic contacts. Cross-sectional transmission electron microscopy analysis indicates the existence of a uniform thin film with crystallites on the surface at regular intervals increasing surface roughness. Jump ratio maps and hollow cone dark field imaging have shown that the crystallites have the same composition and orientation as the underlying micron-sized grains

[en] In this report, we present the experimental results obtained in the synthesis of titanium disilicide from the simpler substances: Ti + 2Si TiSi₂. The initial mixture was subjected to shock-wave loading in specially developed flat vessels for the retention of the material in electrical measurements

[en] The cathodic hydrogen evolution on titanium, tungsten, and molybdenum disilicides, as well as on the corresponding metals, has been studied in a 3% NaCl solution at 20 degree C. The transition metal silicides reveal higher overvoltage than corresponding metals. Two different mechanisms of hydrogen evolution have been established. The slowed down discharge mechanism proved to be characteristic of TiSi₂, WSi₂, and MoSi₂, while the electrochemical desorption one is valid for the respective metals

[en] In this work we observe the behaviour of structure and phase composition of disilicide titanium, which is generated by rapid thermal treatment. It is shown, that the application of RTT for formation of disilicide titanium allows to carry out its synthesis at temperature on 100 ⁰C below and in time on some orders less, than at long thermal treatment. It allows to form disilicide titanium in one stage without its interaction with a below laying dioxide of silicon. This thing is very important in technology of SBIC. Thus, the phase transitions have the following sequence: Ti 620 ⁰C → Ti₅Si₃ + Ti Si → 660 ⁰C Ti₅Si₃ + Ti Si + TiSi₂ (C49) → 700 ⁰C Ti Si + TiSi₂ (C54) + TiSi₂ (C49) → 720 ⁰C TiSi₂(C54). In contradistinction to the long thermal treatment in the structure of disilicide titanium, which is forming by RTT, during the low-temperature stage practically all its phase updating are formed simultaneously. The micro relief of the disilicide titanium surface , received by the rapid thermal treatment, is considerably less advanced, than of the disilicide titanium, received with the application of the long thermal treatment