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[en] Reorientations of negative divacancies are induced by linearly polarised infrared light with a wavelength of 3.6 μm, and by applying uniaxial stress. The orientations are observed directly in the Si-G7 EPR spectrum. The degree of alignment as a function of the direction of polarisation of the light has been studied. The characteristic time for the thermally activated anneal of this alignment is measured between 16 and 18.3 K, and is found to depend on the donor concentration; it has different values for the stress and the optically induced alignment. (author)
Source
Albany, J.H. (ed.); Institute of Physics, London (UK); Institute of Physics Conference Series; no. 46; p. 242-247; ISBN 0 85498 137 3; 
; 1979; p. 242-247; Institute of Physics; Bristol; International conference on defects and radiation effects in semiconductors; Nice, France; 11 - 14 Sep 1978
; 1979; p. 242-247; Institute of Physics; Bristol; International conference on defects and radiation effects in semiconductors; Nice, France; 11 - 14 Sep 1978