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AbstractAbstract
[en] For a long life photovoltaic cell the degradation of the device characteristics with 1 MeV electron radiation must be known so as to be able to predict the life of the cell. Hence, a study was made of radiation damage effects on the bulk properties of the silicon crystal, such as conductivity, Hall effect, carrier life time and carrier mobility. From the results of the data, it is concluded that there appeared to be a steady state damage level reached in P type material. (author)
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Journal Article
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Journal of Korea Institute of Electronics Engineers; v. 15(4); p. 26-32
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