[en] Annealing, in the dark and under an ionization background of a 100 keV electron beam of intensity 7.5μA/cm² and the UV light of a 250 W mercury lamp, was studied in silicon samples implanted at room temperature with doses 3.10¹³ - 2.10¹⁵ of boron ions/cm², in the temperature range 400-900⁰C. Compared to thermal annealing in the dark, no change of the annealing course in the range 400-550⁰C is observed. At higher temperature ranges 550-650⁰C and 650-900⁰C the radiation annealing curve is shifted towards higher temperatures by an amount which depends on the dose of implanted boron ions. The activation energies obtained from isothermal annealing runs have higher values for the ionization background. A tentative interpretation attributes the retardment of the annealing processes to the charge-state modification of defects undergoing transformations induced by ionizing radiation. (author)