[en] Zinc implantation has been carried out in n-type GaP at an energy of 100 keV and at doses of 10¹³-10¹⁶ cm^-2. Hall-effect and sheet-resistivity measurements combined with an anodic oxide growth and layer stripping technique have been employed to determine doping profiles in Zn-implanted layers. The effects of implant dose and temperature, annealing time, and encapsulating material on doping profiles formed have been investigated. It has been shown that various doping profiles are formed depending upon implant dose and annealing time, due to the redistribution of implanted Zn which is influenced by these implantation parameters. Very shallow p-type layers (approx. equal to1000 Angstroem thick) have been formed by a 2 min annealing at 900⁰C. Photodetectors with the maximum quantum efficiency of 44% at a wavelength of 440 nm have been fabricated by using the shallow p-type layers formed in n-type GaP substrate. (orig.)