[en] The effect of irradiation temperature for high-energy electrons on defect formation in a near-to-surface silicon layer of Si-SiO₂ structures is studied. The structures are prepared by KEhF-7.5 silicon oxidation in dry oxygen, and they are irradiated with electrons at the 1x10¹⁴ cm^-2 dose in the 20-500 deg C temperature range. The donor concentration in the near-to-surface silicon layer is determined according to the minimum capacity of the high-frequency C-V characteristics of the MOS structures. Irradiation at 20 deg C causes a donor concentration growth in the near-to-surface silicon layer, and at 500 deg C - its decrease in comparison with the value for the initial structure. On the basis of the experimental data the mechanism of the donor concentration veriation with the irradiation temperature, according to which interstitial silicon atoms, generated during irradiation cause formation of defect complexes having donor properties, while increasing temperature their reconstruction proceeds in such a way that the role of complexes with donor properties decreases