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[en] Irradiation of Si single crystal foils with electrons in a high voltage electron microscope (HVEM) at elevated temperatures is known to result in the formation of interstitial-type rod-like defects (RLD) along [100] and platelets with a habit plane [113]. To determine surface effects on RLD formation, space defect distribution in crystals with different impurity content was studied. Diagrams of RLD distribution show RLD to be concentrated mainly near the surface (approximately 0.5 μm deep), with the middle region of the foil being practically free of defects. (Auth.)
Source
Brederoo, P.; Landuyt, J. van (eds.); v. 4; 456 p; ISBN 90-9000149-2; 
; 1980; p. 244-245; Seventh European Congress on Electron Microscopy Foundation; Leiden (Netherlands); 7. European congress on electron microscopy; The Hague (Netherlands); 24 - 29 Aug 1980
; 1980; p. 244-245; Seventh European Congress on Electron Microscopy Foundation; Leiden (Netherlands); 7. European congress on electron microscopy; The Hague (Netherlands); 24 - 29 Aug 1980