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[en] Formation of rod-like defects in Si has been investigated by means of a high-voltage electron microscope. Predominant appearance and accelerated growth of defects near the crystal surfaces have been discovered. It is shown that the separation of components of vacancy-interstitial pairs results from the predominant sink onto the real surface of vacancies. Enrichment of Si layer near the surface with interstitial atoms on oxidation has been established
Journal
Fizika Tverdogo Tela; ISSN 0367-3294; 
; v. 24(7); p. 2037-2042
; v. 24(7); p. 2037-2042