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[en] One possible method for the formation of thin monocrystalline silicon layers on insulators is ion implantation of high doses of nitrogen or oxygen at energies above about 150 keV producing Si3N4 or SiO2 respectively. The authors report on the influence of current density on the damage level in the silicon top layer in a dose range leading to good insulation in the buried silicon nitride. (Auth.)
Journal
Thin Solid Films; ISSN 0040-6090; 
; v. 100(3); p. L25-L28
; v. 100(3); p. L25-L28