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AbstractAbstract
[en] A theoretical analysis has been carried out to investigate the kinetics involved in the CVD growth of CuInS2. A stagnant-layer model is assumed for the numerical simulation. Computational results for the growth rate as a function of the substrate temperature, mean gas velocity and partial pressures in the reaction tube are obtained. This analysis indicates that the substrate temperature plays a dominant role in the growth rate, which is consistent with our experimental data
Source
5. International Conference on Ternary and Multinary Compounds; Cagliari (Italy); 14-16 Sep 1982
Record Type
Journal Article
Literature Type
Conference
Journal
Nuovo Cim., D; v. 2(6); p. 1658-1663
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue