[en] The investigation of electric field effect of up to 10⁵ V/cm electric intensity on formation and spatial distribution of radiation defects (RD) in the base region of silicon n⁺-p-structures is carried out. The structures are prepared by phosphorus diffusion into the depth of 2-3 μm into p-silicon doped with boron (psub(0)=(1.5-2.0)x10sup(15) cm^-3). The samples have been irradiated at 296 K on the side of n⁺ region by alpha-particles of isotopic source sup(210)Psub(0) (Esub(α)=4.7 MeV), the length of the path of which in silicon constitutes 20 μm. The investigation of effect of charge carriers injection on formed PD stability is performed. It has been found the injection of non-basic carriers at 296 K results in annealing of PD implanted outside the strong electric field region, while defects concentration in the strong field region remains unchangeable. The presented experimental results show that strong electric fields with E>10³ V/cm substantially decrease the velo-- city of formation of some stable radiation defects in p-silicon