[en] The polycrystalline Copper Indium Selenide (CuInSe/sub 2/) was grown by direct combination of the stoichiometric quantities of Cu, In and Se and also by the combination of the binary components like Cu/sub 2/Se and In/sub 2/Se/sub 2/, which were separately synthesized. Thin films were obtained on glass and alumina substrates by vacuum evaporation of bulk CuInSe/sub 2/ using single source and double source evaporation systems. The bulk material as well as the thin films were characterized electrically for resistivity, carrier concentration and mobility and optically for band gap and other impurity energy levels. Effect of annealing on the properties of thin film was also studied