[en] During ion implantation the phase stability and implanted ion composition are strongly affected by the radiation damage inherent in the process. A study was made of the role of radiation damage processes in the implantation of silicon into nickel at temperatures from 25 to 650⁰C. Radiation-induced segregation occurred, resulting in a greatly enriched silicon content on substrate surfaces. The crystalline nickel silicide phases, Ni₅Si₂, Ni₂Si and NiSi₂, were observed over a wide temperature range, including T<200⁰C. The Ni₃Si phase, however, was destabilized by radiation damage and formed only at T>500⁰C. At T>250⁰C and fluences near or exceeding 1x10¹⁸ Si⁺ cm^-2, the implanted layer recrystallized. Penetration of implanted silicon several thousand angstroems beyond the ballistic range of the implanted ions was also observed at these fluences for T>350⁰C. A microcrystalline phase formed in this fluence range at T<200⁰C. (orig.)