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[en] The interaction between dislocations and point defects in Ge and Si is investigated. Point defects were generated by 1 MeV electron beam in the electron microscope in situ. The introduction of dislocations into irradiated crystals was realized by means of plastic deformation. Temperature dependence of dislocation creep rate, the growth of partial dislocation loops during crystal irradiation are presented
Journal
Izvestiya Akademii Nauk SSSR, Seriya Fizicheskaya; ISSN 0367-6765; 
; CODEN IANFA; v. 51(9); p. 1502-1507
; CODEN IANFA; v. 51(9); p. 1502-1507