[en] Chemical kinetics of low pressure chemical vapor deposition (LPCVD) of molybdenum on single crystal p-type (100) oriented silicon substrates were studied by hydrogen reduction of MoF/sub 6/. The pressure and temperature ranges covered were 0.9-10 torr and 250⁰C to 400⁰C, respectively. The rate of molybdenum deposition showed a square root dependence on the hydrogen partial pressure and no dependence on the MoF/sub 6/ partial pressure. The molybdenum film characteristics were dependent on the deposition conditions. Higher temperatures and pressures appeared to favor the formation of molybdenum silicide films near the molybdenum-silicon interface