[en] This front-gate, back-gate, and sidewall response of SIMOX and ZMR MOS transistors to 10-keV x-ray and Co-60 irradiation is compared for SOI devices with and without hardened sidewall passivation. 14 refs., 4 figs
1988; 5 p; 25. annual conference on nuclear and space radiation effects; Portland, OR (USA); 12-15 Jul 1988; CONF-880730--1; Available from NTIS, PC A02/MF A01; 1 as DE88006102