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[en] Arsenic or phosphorus doped polycrystalline-Si (poly-Si) acts as a diffusion source when deposited on GaAs. Non-Fickian Si diffusion into GaAs has been observed following heat treatments above 7000C. In this paper, the diffusion of In and P from poly-Si at temperatures between 800 and 10200C is presented. These impurities, introduced into the poly-Si by in-situ plasma deposition, implantation or vapor annealing, diffuse rapidly into the GaAs. Results from particle induced x-ray analysis, transmission electron microscopy, Rutherford backscattering and secondary ion mass spectroscopy indicate 80% substitutional In and P at interface concentrations of approximately 10 and 25 at %, respectively
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Dow, J.D.; Schuller, I.K; Materials Research Society symposia proceedings. Volume 77; 811 p; ISBN 0-931837-56-1; 
; 1987; p. 785-790; Materials Research Society; Pittsburgh, PA (USA); Materials Research Society symposium on interfaces, superlattices and thin films; Boston, MA (USA); 1-6 Dec 1986; CONF-8612131--
; 1987; p. 785-790; Materials Research Society; Pittsburgh, PA (USA); Materials Research Society symposium on interfaces, superlattices and thin films; Boston, MA (USA); 1-6 Dec 1986; CONF-8612131--