Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.025 seconds
Kachurin, G.A.; Tyschenko, I.E.; Popov, V.P.; Tijs, S.A.
Proceedings of 18. All-union conference on physics of charged particles interactions with crystals1989
Proceedings of 18. All-union conference on physics of charged particles interactions with crystals1989
AbstractAbstract
[en] Redistribution of nitrogen implanted to silicon at 600-1100 deg C temperatures with 135 keV energy is investigated. Nitrogen distribution in depth is studied by the Rutherford backscattering (RBS) of He+ ions with 1.5 MeV energy as well as by means of the Auger spectroscopy with layer-by layer cathode sputtering. Analysis of the results has shown that the temperature of defect formation suppression when bombarding with nitrogen ions is 900 deg C. It leads to nitrogen motion to the surface at temperatures higher than 900 deg C. Increase of the ion dose promotes the accumulation of a large number of effective sinks and that's why even at 900 deg C and at dose 3x1017 cm-2 nitrogen concentration for a narrow peak at the depth of average ranges is observed. 4 refs.; 3 figs
Original Title
Pereraspredelenie azota, implantiruemogo v kremnij pri temperaturakh 600-1100 deg C
Source
Moskovskij Gosudarstvennyj Univ., Moscow (USSR). Nauchno-Issledovatel'skij Inst. Yadernoj Fiziki; 166 p; 1989; p. 131-133; 18. All-union conference on physics of charged particles interactions with crystals; Moscow (USSR); 30 May - 1 Jun 1988
Record Type
Miscellaneous
Literature Type
Conference
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue