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AbstractAbstract
[en] The oxidation-induced stacking faults and (113)-defects in the vicinity of the Si crystal surface have been studied using electron beam induced current (EBIC) mode of a scanning electron microscope. The difference for the electrical activity of these defects is supposed to be due to the difference for the atomic structure of the interstitial clusters
Original Title
Ob ehlektricheskoj aktivnosti skoplenij mezhdouzel'nykh atomov v pripoverkhnostnykh sloyakh kremniya
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Record Type
Journal Article
Journal
Poverkhnost': Fizika, Khimiya, Mekhanika; CODEN PFKMD; (no.6); p. 100-103
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