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[en] The authors' recent report of epitaxial single crystal growth of C+ ion-beam-deposited diamond films on (111) single crystals of silicon is shown to be incorrect. The authors briefly describe the circumstances leading to this revision (and to our earlier finding) and discuss the possible structure of these films based on preliminary synchrotron x-ray data and on the Raman spectrum
Source
Poker, D.B. (Oak Ridge National Lab., TN (USA)); Ortiz, C. (International Business Machines Corp., San Jose, CA (USA). Research Lab.); Materials Research Society symposium proceedings. Volume 152; 298 p; ISBN 1-55899-025-9; 
; 1989; p. 9-14; Materials Research Society; Pittsburgh, PA (USA); Optical materials: processing and science; San Diego, CA (USA); 24-26 Apr 1989; CONF-8904283--; Materials Research Society, 9800 McKnight Rd., Suite 327, Pittsburgh, PA 15237 (USA)
; 1989; p. 9-14; Materials Research Society; Pittsburgh, PA (USA); Optical materials: processing and science; San Diego, CA (USA); 24-26 Apr 1989; CONF-8904283--; Materials Research Society, 9800 McKnight Rd., Suite 327, Pittsburgh, PA 15237 (USA)