Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.024 seconds
[en] The method of angular distribution of annihilation photons was used to investigate the formation and annealing of radiation defects in Ge and Si irradiated with reactor neutrons. These effects were studied as a function of the type of conduction of the dopant concentration. The nature of annealing demonstrated positron annihilation at multivacancy complexes located within disordered regions
Journal
Soviet Physics - Semiconductors (English Translation); ISSN 0038-5700; 
; CODEN SPSEA; v. 23(2); p. 160-164
; CODEN SPSEA; v. 23(2); p. 160-164