[en] Several microstructural parameters can be obtained from the HWHM (half width at half maximum) Γ of the TO-like mode and the peak positions in the Raman spectra of non-crystalline silicon materials (including multilayer and single thick films). These are the rms bond angle variation Δθ=(Γ-7.5)/3 (deg), the average distortion energy per bond (u) of the inteface, and the stress near the interface (σ), in a-Si:H layers. The grain size of the μc-Si films can be also obtained from Δd ∝ 2π(B/Δω_TO)^1/2. The distortion energy, is given by U=3K(ranti Δ anti θ)², where K and r are the force constant of Si (9.2x10³ dyn/cm²) and the bond length of Si (2.4x10^-8 cm), respectively, σ is equal to n x ΔU, n is the total number of distorted Si-Si bonds per unit area near the interface, and ΔU is the average excess distortion energy. The microstructural parameters of thick single μc-Si:B films and different composition-modulated superlattices are compared when the following quantities are changed: (1) d_s (thickness of the a-Si:H layer), (2) R (the NH₃/SiH₄ ratio). The microstructures can well be understood after proper theoretical models are adopted, i.e., using the Peierls-Nabarro model, it can be explained that the stress near the interface is inversely proportional to the thickness of the a-Si:H layer (d_s) within the range of a few monolayers. The Pantelides model can be used to explain the overcoordination of nitrogen in the a-Si:H layer near the interface. (orig.)