[en] The positive magnetoconductivity Δσ(B) of InP near the metal-insulator transition (MIT) was measured as a function of the conduction electron concentration and the compensation ratio. Starting deep within the metallic regime the charge carrier density of the sample was reduced stepwise below the critical value of the MIT by fast neutron irradiation due to the acceptor-like nature of the irradiation defects. Up to being exposed to a fast neutron dose of Φt_f 1.4 x 10¹⁶cm^-2 the sample behaved in a metallic fashion, and subsequent to each irradiation step the inelastic scattering time was deduced from the slope of the Δσ = f(B²) curves in the temperature range 2K < Τ < 6K. The temperature dependence of the inelastic scattering time was found to vary as T^-1, in agreement with a previous theory. After the radiation-induced crossover into the insulating regime the Δσ ∝ B² dependence was still observed. In this case the temperature dependence of the negative magnetoresistance was of the form Δρ/ρ ∝ Τ^-α with α 1.26. The influence of the compensation ratio on the measured properties is discussed. (author)