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[en] An extensive structural investigation of InAs ultrathin epitaxial films of different thickness (0.18 nm≤tInAs≤0.77 nm) buried in a GaAs host matrix is presented. The results show a transition from a perfect coherently grown epitaxial structures to a 3D nucleation mode with the increasing of the InAs thickness beyond 0.81 nm. 10 refs., 3 figs., 1 tab
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