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Szatkowski, J.; Placzek-Popko, E.; Sieranski, K.; Bieg, B.
Materials of 6. Scientific Conference on Electronic Technology. Vol. 11997
Materials of 6. Scientific Conference on Electronic Technology. Vol. 11997
AbstractAbstract
[en] The investigation results of deep energy levels in Cd0.99Mn0.01Te (n-type) doped with gallium have been presented. Deep level transient spectroscopy (DLTS) measurements have been carried out in temperature range 80-420 K. The results show five types of electron traps. The activation energy of trapping levels and electron trapping cross-sections have been determined for observed traps. 2 refs, 3 figs, 1 tab
Original Title
Spektroskopia glebokich poziomow domieszkowych w Cd0.99Mn0.01Te:Ga
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Source
Akademia Gorniczo-Hutnicza, Cracow (Poland); 1500 p; 1997; p. 327-330; 6. Scientific Conference on Electronic Technology; 6. Konferencja Naukowa Technologia Elektronowa; Krynica (Poland); 6-9 May 1997; Available from Akademia Gorniczo-Hutnicza, Mickiewicza 30, 30-059 Cracow, Poland
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Miscellaneous
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Conference
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