[en] ZnTe growth has been investigated, using (100) oriented ZnTe substrates, by the synchrotron-radiation-excited epitaxy at a very low pressure of ∼ 10^-5 Torr. Diethylzinc (DEZn) and diethyltelluride (DETe) were used as source materials. The transport rate ratio of DETe to DEZn is an important factor for improving the crystallinity of the film. The epitaxial growth is attainable even at room temperature. The growth rate characteristics of epitaxial film as functions of substrate temperature and DETe transport rate suggest that the adsorption of source materials followed by the decomposition due to the surface excitation is important in the ZnTe growth. (author)