[en] The high-energy ion irradiation represents one of the perspective methods for modification of semiconductor materials. The first results regarding the effect of irradiation with high-energy ions on depth profiles of electrically active impurities (Al, As, Sb, Ga, Bi) in silicon have been presented. The aim of the present work is the study of modification of boron profile in silicon after irradiation with Kr, Xe and Bi ions with energies in the range 3 to 5 MeV/amu. The <111> n-type silicon wafers, implanted with 140 keV boron ions up to a dose of 2 x 10¹⁵ cm^-2 have been used in our experiments. These wafers have been irradiated with Kr (245 MeV and 305 MeV), Xe (600 MeV) and Bi (710 MeV) ions with fluxes ranging from 10¹¹ to 10¹³ cm^-2. After high-energy ion irradiation the thermal annealing of the samples has been carried out in nitrogen ambient at 800, 900, 1000 and 1100 deg. C for 30 minutes. The study of boron profiles has been performed with secondary ion mass spectrometry and spreading resistance methods. The results of present investigations showed that the high-energy ion irradiation, even at relatively low doses of about 10¹¹ cm^-2, provides a considerable redistribution of boron in silicon in comparison with reference samples. Typical example of this effect, enhanced by high-energy ions is presented. In the analysis of the obtained results, the main attention is focussed on the next questions: - the role of electronic and nuclear stopping processes of high-energy heavy ions in forming radiation damage in silicon; - the effect of high electronic energy loss (higher than 10 keV/nm) on dopant redistribution in silicon; - the dependence of diffusion parameters of boron on the concentration of defects created in silicon by high-energy heavy ions. (authors)