[en] Using one-color two step ionisation schemes, we have measured using resonant ionisation spectroscopy (RIS) the number of Ni atoms ejected in the ground state (a³F₄) and an electronically excited state (a³D₃) state from both Ni₃Al and pure Ni surfaces. The ratio of the RIS signal from the a³D₃ state to that from the a³F₄ state is 1.07±0.03 for Ni₃Al and 1.05±0.08 for pure Ni. To within experimental error, we saw no difference between pure Ni and the alloy in the relative sputter yield of Ni atoms in the excited a³D₃ state compared to ground a³F₄ state. There is a difference in the electronic band structure between pure Ni and Ni₃Al. The above result indicates the different band structure does not influence the relative sputter yields of excited states