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AbstractAbstract
[en] High-energy ion implantation is very important for SiC power semiconductor devices. To form an implanted aluminum box-profile, continuously variable energy RFQ (CVE-RFQ) linac was newly constructed. The linac is a bottom-settled type RFQ structure with double tunable plates. The resonance frequency range of this cavity is from 11.8 to 29.3 MHz, and Q-value of the cavity is over 5000. Beam acceleration test was carried out using Ar ions. Result showed that the ions were accelerated from 12 to 450 KeV using an RF power of 2.7 kW. (author)
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Japan Synchrotron Radiation Research Inst., Mikazuki, Hyogo (Japan); 446 p; 2000; p. 300-302; 25. linear accelerator meeting in Japan; Himeji, Hyogo (Japan); 12-14 Jul 2000; Available from Japan Synchrotron Radiation Research Institute, 1-1-1 Koto, Mikazuki-cho, Hyogo-ken 679-5198 Japan; 5 figs., 3 refs.
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Miscellaneous
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Conference
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