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Borrello, L.; Dell'Orso, R.; Dutta, S.; Gennai, S.; Mariani, M.; Messineo, A.; Segneri, G.; Starodumov, A.; Teodorescu, L.; Tonelli, G.; Verdini, P.G., E-mail: laura.borrello@pi.infn.it2001
AbstractAbstract
[en] The Charge Collection Efficiency (CCE) for heavily irradiated silicon devices has been carefully investigated on a series of microstrip detectors. Large-area sensors designed for the CMS silicon tracker have been irradiated with neutrons and protons up to a very high fluence. Effects on CCE have been studied using a beam of minimum ionizing particles and a fast shaping time electronics similar to what is expected in CMS. The paper shows the performance of the sensors for CCE and Signal-to-Noise ratio (S/N) under different operating conditions
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S0168900200012006; Copyright (c) 2001 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: Germany
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Journal Article
Journal
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment; ISSN 0168-9002; ; CODEN NIMAER; v. 461(1-3); p. 178-181
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