[en] Silicon nitride layers grown on Si (1 1 1) by atomic nitrogen exposure at elevated substrate temperatures have been investigated in situ by photoemission spectro-microsopy. From the X-ray photo emission spectra taken at various sample areas, the chemical composition of samples grown at 800 deg. C is found to be homogenous all over the surface, with a stoichiometry according to Si₃N₄. Due to attenuation of the photo electrons, the images also provide information about the morphology of the nitride films. For 800 deg. C, a smooth film is observed, whereas for growth temperatures exceeding 900 deg. C, an increased roughness is observed