Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.018 seconds
Novak, D.; Kerek, A.; Klamra, W.; Norlin, L.-O.; Bagge, L.; Kaellberg, A.; Paal, A.; Rensfelt, K.-G.; Molnar, J., E-mail: kerek@msi.se1999
AbstractAbstract
[en] A measuring station has been built at the CRYRING heavy ion accelerator to test the Single Event Upset (SEU) phenomena in working Static RAM circuits. The setup extracts the beam using Rutherford scattering and the ions are monitored with a BaF2 scintillator. SEU measurements have been performed for standard bulk CMOS memory circuits
Primary Subject
Source
S0168900299001837; Copyright (c) 1999 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: Philippines
Record Type
Journal Article
Journal
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment; ISSN 0168-9002; ; CODEN NIMAER; v. 430(1); p. 166-170
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue