Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.017 seconds
AbstractAbstract
[en] In a semiconductor with a large dielectric constant and a small electron effective mass, a positive ion and an electron can form a series of very weakly bound, macroscopic-sized shallow states. We present electric field (EF)-μSR measurements on CdS, where the final muonium state has an extremely low hyperfine coupling. In strong fields (higher than Echar∼5-10 kV/cm) the muonium signal is suppressed completely. We argue that muonium formation in CdS proceeds through the intermediate shallow states mentioned above. The experimental technique of EF-μSR measurements (using pulsed muon beams at ISIS) is discussed in detail
Source
S0921452602015910; Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue