[en] Stoichiometric HfO₂ films were atomic layer deposited from HfI₄ and HfCl₄ at 300 deg. C on p-Si(1 0 0) substrates. Water was in both cases used as an oxygen precursor. The films consisted dominantly of monoclinic HfO₂ phase. Additional tetragonal HfO₂ could be detected only in the films grown from HfCl₄. Effective permittivities were frequency-independent and varied in the range of 12-14, without clear dependence on the precursor used. Oxide rechargeable trap densities were relatively high for the films grown from HfCl₄. The films grown from HfI₄ were more resistant against breakdown. The films grown from either precursor contained 0.4 at.% of halide residues and 1.0-1.5 at.% hydrogen. Annealing in forming gas at 400 deg. C did not affect the film composition. The growth rate was somewhat more stable in the HfI₄ based process