[en] ZnO particles embedded in SiO₂ thin films were prepared by a radio-frequency magnetron sputtering technique. X-ray diffraction (XRD) and optical-absorption spectra showed that ZnO particles with hexagonal wurtzite structure had been embedded in the SiO₂ matrix, and the size of ZnO particles increased with increasing annealing temperature from 773 to 973 K. Raman-scattering and Fourier transform infrared (FTIR) spectrum measurements also confirmed the presence of ZnO particles. When the annealing temperature was lower than 973 K, room-temperature photoluminescence (PL) spectra showed dominative deep-level emissions in the visible region and very weak ultraviolet emissions. As the annealing temperature increased to 973 K, an emission band in the ultraviolet region besides the emissions from free and bound excitons recombination was observed in the low-temperature PL spectra. The origin of the ultraviolet emission bands was discussed with the help of temperature-dependent PL spectra. When the annealing temperature was higher than 973 K, Zn₂SiO₄ particles were formed, as shown by XRD and FTIR results