[en] The InN phase is grown in crystalline InP(100) substrates by 50 keV N⁺ implantation at an elevated temperature of 400 deg. C followed by annealing at 525 deg. C in N₂ ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ∼1.06 eV at temperatures ≤150 K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase